ONSEMI 2SB1216T-TL-E | 搜芯易Sourcengine

ONSEMI 2SB1216T-TL-E

生命周期状态
Active
RoHS
符合RoHS标准
说明
TRANS PNP 100V 4A TP-FA
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
TIN BISMUTH
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
200
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
4 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
20 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
100 V
Transition Frequency-Nom (fT)
130 MHz