ONSEMI 2SB1203T-TL-E | 搜芯易Sourcengine

ONSEMI 2SB1203T-TL-E

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Trans GP BJT PNP 50V 5A 3-Pin(2+Tab) TP-FA T/R
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

VCEsat-Max
0.4 V
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
TIN BISMUTH
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
35
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
5 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
20 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
1 W
Transition Frequency-Nom (fT)
180 MHz
Collector-base Capacitance-Max
40 pF
Time@Peak Reflow Temperature-Max (s)
30