Renesas Technology Corp. 2SB1110 | 搜芯易Sourcengine

Renesas Technology Corp. 2SB1110

生命周期状态
Transferred
说明
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
60
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.1
Collector-emitter Voltage-Max (V)
200
Transition Frequency-Nom (fT) (MHz)
140