Toshiba Corporation 2SA2184(TE16L1,Q) | 搜芯易Sourcengine

Toshiba Corporation 2SA2184(TE16L1,Q)

生命周期状态
Active
RoHS
符合RoHS标准
说明
Small Signal Bipolar Transistor, 1A I(C), 550V V(BR)CEO, 1-Element, PNP, Silicon
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.7
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
550
Power Dissipation Ambient-Max (W)
1
Collector-base Capacitance-Max (pF)
30
Transition Frequency-Nom (fT) (MHz)
27