Toshiba Corporation 2SA1987R(Q) | 搜芯易Sourcengine

Toshiba Corporation 2SA1987R(Q)

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Bipolar Transistor, 15A I(C), 1-Element, PNP
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE
Surface Mount
NO
Number of Elements
1
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
55
Power Dissipation-Max (W)
180
Collector Current-Max (IC) (A)
15
Operating Temperature-Max (Cel)
150