Toshiba Corporation 2SA1934 | 搜芯易Sourcengine

Toshiba Corporation 2SA1934

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.4 V
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
40
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
5 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
80 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
60 MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED