Toshiba Corporation 2SA1905-Y(TP,Q) | 搜芯易Sourcengine

Toshiba Corporation 2SA1905-Y(TP,Q)

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

VCEsat-Max
0.4 V
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
120
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
5 A
Power Dissipation-Max (Abs)
1.3 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Power Dissipation Ambient-Max
1.3 W
Transition Frequency-Nom (fT)
60 MHz
Collector-base Capacitance-Max
170 pF