ONSEMI 2SA1416T-TD-E | 搜芯易Sourcengine

ONSEMI 2SA1416T-TD-E

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e6
VCEsat-Max (V)
0.6
Case Connection
COLLECTOR
Terminal Finish
Tin/Bismuth (Sn/Bi)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
200
Power Dissipation-Max (W)
1.3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
100
Power Dissipation Ambient-Max (W)
0.5
Collector-base Capacitance-Max (pF)
13
Transition Frequency-Nom (fT) (MHz)
120
Time@Peak Reflow Temperature-Max (s)
30