Toshiba Corporation 2SA1255TE85L | 搜芯易Sourcengine

Toshiba Corporation 2SA1255TE85L

生命周期状态
Discontinued
说明
Small Signal Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1 V
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
70
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.05 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
200 V
Transition Frequency-Nom (fT)
100 MHz
Collector-base Capacitance-Max
7 pF