NEW JERSEY SEMICONDUCTOR PRODUCTS INC 2SA1220R | 搜芯易Sourcengine

NEW JERSEY SEMICONDUCTOR PRODUCTS INC 2SA1220R

生命周期状态
Active
说明
Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-126
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
0.7
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
60
Power Dissipation-Max (W)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1.2
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
120
Power Dissipation Ambient-Max (W)
1.2
Collector-base Capacitance-Max (pF)
26
Transition Frequency-Nom (fT) (MHz)
175