ONSEMI 2SA1207T-AA | 搜芯易Sourcengine

ONSEMI 2SA1207T-AA

生命周期状态
EOL
说明
2SA1207 - PNP EPITAXIAL PLANAR S
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

VCEsat-Max
0.4 V
JESD-30 Code
O-PBCY-T3
Configuration
SINGLE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
200
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.07 A
Power Dissipation-Max (Abs)
0.6 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
160 V
Power Dissipation Ambient-Max
0.6 W
Transition Frequency-Nom (fT)
150 MHz
Collector-base Capacitance-Max
2.5 pF