Toshiba Corporation 2SA1161 | 搜芯易Sourcengine

Toshiba Corporation 2SA1161

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-92
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PBCY-T3
Configuration
SINGLE
JEDEC-95 Code
TO-92
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
20
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.03 A
Power Dissipation-Max (Abs)
0.2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
8 V
Transition Frequency-Nom (fT)
3500 MHz