International Rectifier Corporation 2N7426UF | 搜芯易Sourcengine

International Rectifier Corporation 2N7426UF

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 29A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CBCC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Elements
1
Reference Standard
MIL-19500/655C
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
29 A
DS Breakdown Voltage-Min
200 V
Transistor Element Material
SILICON
Pulsed Drain Current-Max (IDM)
108 A