- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 35A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-XSFM-P3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-254AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Reference StandardMIL-19500/660A
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)35 A
- DS Breakdown Voltage-Min60 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)500 mJ
- Pulsed Drain Current-Max (IDM)192 A
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