NEW ENGLAND SEMICONDUCTOR 2N7371 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR 2N7371

生命周期状态
Transferred
说明
Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-MSFM-P3
Configuration
DARLINGTON
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
VCEsat-Max (V)
3
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
1000
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
12
Collector-emitter Voltage-Max (V)
100
Transition Frequency-Nom (fT) (MHz)
10