HARRIS SEMICONDUCTOR 2N7298 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR 2N7298

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 9A I(D), 500V, 0.615ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
9 A
DS Breakdown Voltage-Min
500 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.615 ohm