HARRIS SEMICONDUCTOR 2N7281 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR 2N7281

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2 A
DS Breakdown Voltage-Min
500 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
2.5 ohm