NEW JERSEY SEMICONDUCTOR PRODUCTS INC 2N7236 | 搜芯易Sourcengine

NEW JERSEY SEMICONDUCTOR PRODUCTS INC 2N7236

生命周期状态
Active
说明
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
18
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
120
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
200
Turn-off Time-Max (toff) (ns)
150
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
72
Drain-source On Resistance-Max (ohm)
0.22