Microsemi Corporation 2N7224UE3 | 搜芯易Sourcengine

Microsemi Corporation 2N7224UE3

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-276AB
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
34
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Drain-source On Resistance-Max (ohm)
0.081