2N7000-G
COMCHIP TECHNOLOGY CO LTD
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Single N-Channel MOSFET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-PBCY-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-92
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.625
- Drain Current-Max (ID) (A)0.2
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)5
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)0.625
- Drain-source On Resistance-Max (ohm)5
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2N7000-G