VISHAY SILICONIX 2N6963 | 搜芯易Sourcengine

VISHAY SILICONIX 2N6963

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-210
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
O-MUPM-D3
Configuration
SINGLE
JEDEC-95 Code
TO-210
JESD-609 Code
e0
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
30 A
DS Breakdown Voltage-Min
200 V
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
150 W
Drain-source On Resistance-Max
0.09 ohm