2N6792
HARRIS SEMICONDUCTOR
- 生命周期状态Active
- 说明2N6792
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-205AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)20
- Drain Current-Max (ID) (A)2
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)75
- DS Breakdown Voltage-Min (V)400
- Feedback Cap-Max (Crss) (pF)40
- Turn-off Time-Max (toff) (ns)95
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)20
- Pulsed Drain Current-Max (IDM) (A)10
- Drain-source On Resistance-Max (ohm)1.8
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2N6792