2N6790
UNITRODE CORP
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-205AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)20
- Drain Current-Max (ID) (A)3.5
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)90
- DS Breakdown Voltage-Min (V)200
- Feedback Cap-Max (Crss) (pF)80
- Turn-off Time-Max (toff) (ns)100
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)20
- Pulsed Drain Current-Max (IDM) (A)14
- Drain-source On Resistance-Max (ohm)0.8
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2N6790