INFINEON TECHNOLOGIES AG 2N6786 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG 2N6786

生命周期状态
Active
说明
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
15
Drain Current-Max (ID) (A)
1.25
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
400
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
0.82
Pulsed Drain Current-Max (IDM) (A)
5.5
Drain-source On Resistance-Max (ohm)
3.6
Screening Level / Reference Standard
MILITARY STANDARD (USA)