Microsemi Corporation 2N6764E3 | 搜芯易Sourcengine

Microsemi Corporation 2N6764E3

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-204AE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
38
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) (A)
152
Drain-source On Resistance-Max (ohm)
0.065
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED