2N6760
HARRIS SEMICONDUCTOR
- 生命周期状态Active
- 说明N-CHANNEL POWER MOSFET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-204AA
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)75
- Drain Current-Max (ID) (A)5.5
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)65
- DS Breakdown Voltage-Min (V)400
- Feedback Cap-Max (Crss) (pF)80
- Turn-off Time-Max (toff) (ns)90
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)75
- Pulsed Drain Current-Max (IDM) (A)8
- Drain-source On Resistance-Max (ohm)1
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2N6760