Solid State Inc. 2N6661 | 搜芯易Sourcengine

Solid State Inc. 2N6661

生命周期状态
Active
RoHS
符合RoHS标准
说明
SOLID STATE - 2N6661 - Power MOSFET, N Channel, 90 V, 900 mA, 3 ohm, TO-205AF, Through Hole
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
90
Feedback Cap-Max (Crss) (pF)
10
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max (ohm)
4
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED