UTC, Ltd. 2N65L-TMA-T | 搜芯易Sourcengine

UTC, Ltd. 2N65L-TMA-T

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
650
Avalanche Energy Rating (Eas) (mJ)
140
Pulsed Drain Current-Max (IDM) (A)
8
Drain-source On Resistance-Max (ohm)
5