- 生命周期状态Contact Mfr
- 说明Power Bipolar Transistor, 12A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max4 V
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-3
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Case ConnectionCOLLECTOR
- Terminal PositionBOTTOM
- Fall Time-Max (tf)1500 ns
- Number of Elements1
- Rise Time-Max (tr)1500 ns
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypePNP
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)1900 ns
- Turn-off Time-Max (toff)6500 ns
- DC Current Gain-Min (hFE)5
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)12 A
- Power Dissipation-Max (Abs)100 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max40 V
- Transition Frequency-Nom (fT)1.5 MHz
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