General Semiconductor, Inc. 2N6586 | 搜芯易Sourcengine

General Semiconductor, Inc. 2N6586

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 7A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

VCEsat-Max
1.5 V
JESD-30 Code
O-MUPM-D3
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
7
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
7 A
Power Dissipation-Max (Abs)
71 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
500 V
Power Dissipation Ambient-Max
71.4 W
Transition Frequency-Nom (fT)
50 MHz