2N657A
GENERAL DIODE CORP
- 生命周期状态Discontinued
- 说明Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-5
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)30
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)0.5 A
- Power Dissipation-Max (Abs)1 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max100 V
- Transition Frequency-Nom (fT)888 MHz
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2N657A