ASI Semiconductor, Inc. 2N6166 | 搜芯易Sourcengine

ASI Semiconductor, Inc. 2N6166

生命周期状态
Contact Mfr
说明
Trans RF BJT NPN 35V 9A 117000mW 4-Pin Case .500
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRFM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
117
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
9
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
35
Collector-base Capacitance-Max (pF)
130