ASI Semiconductor, Inc. 2N6093 | 搜芯易Sourcengine

ASI Semiconductor, Inc. 2N6093

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-217
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
X-XUPM-P4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-217
Package Shape
UNSPECIFIED
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
83
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
10
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
35
Collector-base Capacitance-Max (pF)
250
Transition Frequency-Nom (fT) (MHz)
100