Microsemi Corporation 2N6081 | 搜芯易Sourcengine

Microsemi Corporation 2N6081

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Trans RF BJT NPN 18V 2.5A 4-Pin Style M135
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-XRPM-F4
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
31
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2.5
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
18
Collector-base Capacitance-Max (pF)
85
Transition Frequency-Nom (fT) (MHz)
200