2N5875
CRIMSON SEMICONDUCTOR INC
- 生命周期状态Discontinued
- 说明Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max1 V
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-3
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)10 A
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max60 V
- Power Dissipation Ambient-Max150 W
- Transition Frequency-Nom (fT)2 MHz
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2N5875