NEW ENGLAND SEMICONDUCTOR 2N5729 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR 2N5729

生命周期状态
Transferred
说明
Power Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
10
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
200
Power Dissipation Ambient-Max (W)
11.7
Transition Frequency-Nom (fT) (MHz)
30