SEMITRONICS CORP 2N5643 | 搜芯易Sourcengine

SEMITRONICS CORP 2N5643

生命周期状态
Contact Mfr
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE
Surface Mount
NO
Number of Elements
1
Qualification Status
Not Qualified
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
5 A
Power Dissipation-Max (Abs)
60 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
35 V
Transition Frequency-Nom (fT)
200 MHz
Collector-base Capacitance-Max
65 pF