2N5642
HI-TRON SEMICONDUCTOR CORP
- 生命周期状态Contact Mfr
- 说明RF Power Bipolar Transistor, 1-Element, Silicon, NPN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- DLA QualificationNot Qualified
- Number of Elements1
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)5
- Power Dissipation-Max (W)30
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)3
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)35
- Transition Frequency-Nom (fT) (MHz)250
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2N5642