Motorola,Inc. 2N5642 | 搜芯易Sourcengine

Motorola,Inc. 2N5642

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
8.2 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
5
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
3 A
Power Dissipation-Max (Abs)
30 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
35 V
Power Dissipation Ambient-Max
30 W
Transition Frequency-Nom (fT)
250 MHz
Collector-base Capacitance-Max
35 pF