Vishay Intertechnology, Inc. 2N5486L-E3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. 2N5486L-E3

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PBCY-T3
Configuration
SINGLE
JEDEC-95 Code
TO-226AA
JESD-609 Code
e3
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
18 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.03 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
1 pF
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Transistor Element Material
SILICON