GPD OPTOELECTRONICS CORP 2N539 | 搜芯易Sourcengine

GPD OPTOELECTRONICS CORP 2N539

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 3.5A I(C), 55V V(BR)CEO, 1-Element, PNP, Germanium
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-XUPM-D3
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
10
Transistor Element Material
GERMANIUM
Collector Current-Max (IC) (A)
3.5
Operating Temperature-Max (Cel)
95
Collector-emitter Voltage-Max (V)
55
Screening Level / Reference Standard
MIL-19500/38C