Microsemi Corporation 2N5014 | 搜芯易Sourcengine

Microsemi Corporation 2N5014

生命周期状态
Contact Mfr
说明
Bipolar Transistors - BJT Power BJT
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-5
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
30
Operating Temperature-Max
200 Cel
Collector Current-Max (IC)
0.2 A
Power Dissipation-Max (Abs)
7 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
900 V