2N4998
SOLITRON DEVICES INC
- 生命周期状态Active-Unconfirmed
- 说明Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- VCEsat-Max0.46 V
- JESD-30 CodeO-MUPM-D3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-59
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)30
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)2 A
- Power Dissipation-Max (Abs)30 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max80 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max35 W
- Transition Frequency-Nom (fT)50 MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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2N4998