GENERAL DIODE CORP 2N424 | 搜芯易Sourcengine

GENERAL DIODE CORP 2N424

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-53, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBFM-X3
Configuration
SINGLE
JEDEC-95 Code
TO-53
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
12
Power Dissipation-Max (W)
85
Transistor Element Material
SILICON
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
80
Transition Frequency-Nom (fT) (MHz)
8