Microsemi Corporation 2N3927 | 搜芯易Sourcengine

Microsemi Corporation 2N3927

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MUPM-P3
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
23
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
18
Collector-base Capacitance-Max (pF)
45
Transition Frequency-Nom (fT) (MHz)
200