2N3866AJSF
SEMICOA
- 生命周期状态Contact Mfr
- 说明RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-39
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- VCEsat-Max (V)1
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)8
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.4
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-65
- Collector-emitter Voltage-Max (V)30
- Power Dissipation Ambient-Max (W)1
- Collector-base Capacitance-Max (pF)3.5
- Screening Level / Reference StandardMIL-PRF-19500; MIL-STD-750; RH - 300K Rad(Si)
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2N3866AJSF