NEW ENGLAND SEMICONDUCTOR 2N3747 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR 2N3747

生命周期状态
Transferred
说明
Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
O-MUPM-D3
Configuration
SINGLE
JEDEC-95 Code
TO-111
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
VCEsat-Max (V)
2
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
30
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
30
Power Dissipation Ambient-Max (W)
30
Transition Frequency-Nom (fT) (MHz)
40