Microsemi Corporation 2N3637L | 搜芯易Sourcengine

Microsemi Corporation 2N3637L

生命周期状态
Transferred
说明
Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-5
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
60
Power Dissipation-Max (W)
1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
175