2N3597
SEMITRONICS CORP
- 生命周期状态Discontinued
- 说明Power Bipolar Transistor, 20A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MUPM-D3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-63
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)40
- Power Dissipation-Max (W)100
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)175
- Collector-emitter Voltage-Max (V)40
- Transition Frequency-Nom (fT) (MHz)30
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2N3597