Solid State Devices, Inc. 2N3500 | 搜芯易Sourcengine

Solid State Devices, Inc. 2N3500

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
SOLID STATE - 2N3500 - Bipolar (BJT) Single Transistor, NPN, 150 V, 300 mA, 5 W, TO-39, Through Hole
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-5
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.3
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
150
Transition Frequency-Nom (fT) (MHz)
150